Semiconductor rectifier having high breakdown voltage and high s

Details Semiconductor rectifier having high breakdown voltage and high s Semiconductor rectifier having high breakdown voltage and high s

1993-09-13

1994-09-06

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With doping profile to adjust barrier height

257487, 257109, H01L 2978, H01L 2300

Patent

active

053451007

ABSTRACT:
A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which comprises a semiconductor substrate including a first semiconductor layer of one conductivity type and a second semiconductor layer of one conductivity type provided on the first semiconductor layer, a third semiconductor layer of an opposite conductivity type having a depth D and formed in the second semiconductor layer to provide a pn junction therebetween, the third semiconductor layer defining a plurality of exposed regions of the second semiconductor layer, each of the plurality of exposed regions of the second semiconductor layer having a width W, a relation between the depth D and the width W being given by D.gtoreq.0.5W, and a metal electrode provided on the substrate surface.

REFERENCES:
patent: 3849789 (1974-11-01), Cordes et al.
patent: 4641174 (1987-02-01), Baliga
patent: 5101244 (1992-03-01), Mori et al.

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