Semiconductor rectifier having high breakdown voltage and high s

Details Semiconductor rectifier having high breakdown voltage and high s Semiconductor rectifier having high breakdown voltage and high s

1992-04-17

1993-11-16

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With means to prevent edge breakdown

257622, 257916, 257484, 257623, H01L 2948

Patent

active

052626695

ABSTRACT:
A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which includes a semiconductor substrate having an N.sup.+ -type semiconductor layer and an N-type semiconductor layer, a P.sup.+ -type semiconductor layer formed in the N-type semiconductor layer to provide a PN junction therebetween, the P.sup.+ -type semiconductor layer defining exposed regions of the N-type semiconductor layer, and a metal layer provided on an entire surface of the semiconductor substrate having the P.sup.+ -type semiconductor layer to provide contact surfaces of Schottky barrier between the metal layer and each of the exposed regions of the N-type semiconductor layer. In the structure, a configuration of the PN junction is provided to satisfy conditions given by 0.degree.<.theta..ltoreq.135.degree. and 3Wbi.ltoreq.W.ltoreq.2W.sub.B where .theta. is an angle between one of the contact surfaces and a tangent line passing through a point f on the PN junction through which a straight line passes from a top of a built-in depletion layer in parallel with each of the contact surfaces and where W.sub.bi is a thickness of the built-in depletion layer extending to the N-type semiconductor layer at zero bias voltage, W is a width of each of the contact surfaces and W.sub.B is a thickness of a depletion layer at breakdown of the pn junction, respectively.

REFERENCES:
patent: 4641174 (1987-02-01), Baliga
patent: 4646115 (1987-02-01), Shannon et al.
patent: 4862229 (1989-08-01), Mundy et al.
patent: 4982260 (1991-01-01), Chang et al.
patent: 5017976 (1991-05-01), Sugita

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