Semiconductor rectifier device

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357 76, 357 81, H01L 2348, H01L 2502, H01L 2702

Patent

active

046046437

ABSTRACT:
A semiconductor rectifier device includes a heat-radiating substrate, a flame-sprayed insulating layer formed directly on a surface of the substrate, at least one first flame-sprayed metal layer selectively formed on the surface of the radiation substrate, and a second metal layer selectively formed on the flame-sprayed insulating layer. A rectifying circuit has first and second rectifying elements which are electrically coupled, respectively, at terminals of opposite polarities, with the first flame-sprayed metal layer and the second flame-sprayed metal layer. An electrode electrically connects the terminals of the rectifying elements having polarities opposite to those of the terminals connected to the first and second flame-sprayed layers.

REFERENCES:
patent: 3486083 (1969-12-01), Takada
patent: 3777193 (1973-12-01), Buehner
patent: 3789275 (1974-01-01), Sawano et al.
patent: 3820153 (1974-06-01), Quinn
patent: 3925809 (1975-12-01), Striker
patent: 4069497 (1978-01-01), Steidlite
patent: 4218694 (1980-08-01), Grzybowski
patent: 4259061 (1981-03-01), Dubetsky
patent: 4305088 (1981-12-01), Narita et al.
patent: 4320251 (1982-03-01), Narisimhan
patent: 4392151 (1983-07-01), Iwatani
M. Yamauchi et al., "Arc Plasma Sprayed Electrical Circuits and Sputtering Targets", 10 J. Spray Coating Soc'y of Japan, 2:23 (1973).

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