Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1998-03-16
2000-05-30
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257138, 257143, 257212, 257264, 257378, H01L 29739, H01L 2987
Patent
active
060693711
ABSTRACT:
A semiconductor rectifier in which the sum of loss during reverse recovery and loss in a conducting state can be suppressed even if the ratio between the periods of the conducting and blocking states varies and a method of driving the same are disclosed. A voltage is applied to a gate electrode formed in a face-to-face relationship with a base layer of a first conductivity type and an emitter layer of a second conductivity type with a gate insulation film interposed therebetween to form an inversion layer on the surface of the base layer of the first conductivity type. As a result, the base layer of the first conductivity type and the short layer of the first conductivity type are short-circuited to decrease the density of carriers in the base layer of the first conductivity type, loss during a reverse recovery operation can be suppressed.
REFERENCES:
patent: 5477077 (1995-12-01), Kumagai
Udrea, IEEE Electron Device Letters vol. 17, No. 9 "The MOS . . . Injector" pp 425-427, Sep. 1996.
H.P. Yee, et al., "Channel Diode, a New Fast Switching Power Diode", Proceedings of 1992 International Symposium on Power Semiconductor Devices & ICs, Tokyo, May 19, 1992, pp. 72-79.
Inoue Tomoki
Omura Ichiro
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
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