Semiconductor read only memory using MOS diodes

Details Semiconductor read only memory using MOS diodes Semiconductor read only memory using MOS diodes

1978-06-15

1980-06-17

Hecker, Stuart N.

Static information storage and retrieval

Read only systems

Semiconductive

357 41, 357 45, 365104, G11C 1706

Patent

active

042087279

ABSTRACT:
A semiconductor integrated circuit functioning as a read only memory or ROM employs MOS diodes as the memory cells and is formed by a process compatible with standard N-channel silicon gate manufacturing methods. Row address lines are metal strips and gates are polysilicon segments, while output or column lines are defined by elongated N+ regions. The gates are shorted to N+ drain regions to provide diode-like cells. Each MOS transistor in the array is programmed to be a logic "1" or "0", such as by ion implanting through the polysilicon gates and thin gate oxide, rendering some cells of such high threshold that they will not turn on. Alternatively, the array may be contact programmable.

REFERENCES:
patent: 3865651 (1975-02-01), Arita
patent: 3914855 (1975-10-01), Cheney et al.
patent: 4059826 (1977-11-01), Rogers
Cook et al., Read-Only Memory Fabrication by Laser Formed Connections, IBM Technical Disclosure Bulletin, vol. 15, No. 8, Jan. 1973, pp. 2371-2372.

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