Semiconductor random access memory device having digit lines sel

Details Semiconductor random access memory device having digit lines sel Semiconductor random access memory device having digit lines sel

1994-12-21

1995-12-19

Fears, Terrell W.

Static information storage and retrieval

Addressing

365 51, 36518901, G11C 1140

Patent

active

054775019

ABSTRACT:
A semiconductor static random access memory device has a plurality of memory cells selectively connected to digit lines, and the digit lines are formed on different inter-level insulating layers in a partially overlapped manner so as to scale down the memory cells only.

REFERENCES:
patent: 5430672 (1995-07-01), Kywabara et al.
"16Mbit SRAM Cell Technologies for 2.0 V Operation", Ohkubo et al., IEDM 91, pp. 481-484.
"A High-Performance Quadruple Well, Quadruply Poly BiCMOS Process For Fast 16Mb SRAMs", Hayden et al., IEDM 92, 819-822.

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