Semiconductor radioactive ray detector

Details Semiconductor radioactive ray detector Semiconductor radioactive ray detector

1984-05-24

1987-09-08

Davie, James W.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 2, 357 30, 250370, H01L 2714, G01T 122

Patent

active

046927824

ABSTRACT:
In the representative radiation detectors described in the specification, an amorphous silicon layer is grown on one or both of the opposed electrode surfaces of a single crystal silicon substrate and the amorphous silicon layer extends to the side surface of the substrate. The corresponding electrode is deposited on the amorphous silicon layer. Detectors may also be made using a single crystal of Ge, GeAs or CdTe with an amorphous layer of the same or another semiconductor material.

REFERENCES:
patent: 3278811 (1966-10-01), Mori
patent: 3668480 (1972-06-01), Chang et al.
patent: 4214253 (1980-07-01), Hall
Behaviour of Amorphous Ge Contacts to Monocrystalline Silicon, H. Norde and P. A. Tove, Vacuum, vol. 27, No. 3, 201-208 (1977).
Correlation between Barrier Heights and Electron and Hole Currents from Schottky Contacts to Silicon Radiation Detectors and the Observation of Anomalously Low Hole Currents, P. A. Tove, Physica Scripta, vol. 18, 417 (1978).

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