Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2005-02-15
2005-02-15
Garber, Wendy R. (Department: 2612)
Television
Camera, system and detail
Solid-state image sensor
C348S302000, C348S297000, C250S208100
Reexamination Certificate
active
06856350
ABSTRACT:
A semiconductor radiation imaging device includes an array of pixel cells having an array of pixel detectors which directly generate charge in response to incident radiation and a corresponding array of individually-addressable pixel circuits. Each pixel circuit is associated with a respective pixel detector for accumulating charge directly resulting from radiation incident on the pixel detector and includes threshold circuitry and charge accumulation circuitry. The threshold circuitry is configured to discard radiation hits on the pixel detector outside a predetermined threshold range, and the charge accumulation circuit is configured to accumulate charge directly resulting from a plurality of successive radiation hits on the respective pixel detector within the predetermined threshold range.
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Orava Risto Olavi
Pyyhtia Jouni Ilari
Sarakinos Miltiadis Evangelos
Schulman Tom Gunnar
Spartiotis Konstantinos Evangelos
Garber Wendy R.
Kenyon & Kenyon
Nguyen Luong T.
Simage Oy
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