Semiconductor radiation detectors with intrinsic avalanche multi

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257438, 257443, H01L 310328

Patent

active

058804900

ABSTRACT:
The disclosed invention includes an apparatus and method for detecting radiation in a detector. The radiation to be detected ionizes the atoms in the intrinsic silicon lattice of the detector to produce a small signal of freed elections. The small signal is then amplified by avalanche multiplication in a self-limiting manner by preventing the amplified electrons from traveling through a resistive layer, thereby reducing the electric field to limit the avalanche multiplication. An imaging system incorporating the new detector design is also disclosed.

REFERENCES:
patent: 3622784 (1971-11-01), Del Guercio
patent: 3894280 (1975-07-01), Bishop et al.
patent: 3935382 (1976-01-01), Hunt
patent: 4007104 (1977-02-01), Summers et al.
patent: 4194888 (1980-03-01), Schwab et al.
patent: 4311908 (1982-01-01), Goulianos et al.
patent: 4464630 (1984-08-01), Eddins
patent: 4486765 (1984-12-01), Capasso
patent: 4535233 (1985-08-01), Abraham
patent: 4730128 (1988-03-01), Seki
patent: 4794257 (1988-12-01), Baba et al.
patent: 4885620 (1989-12-01), Kemmer et al.
patent: 4896200 (1990-01-01), Seki et al.
patent: 4956716 (1990-09-01), Hewitt et al.
patent: 4973913 (1990-11-01), Oda
patent: 5026148 (1991-06-01), Wen et al.
patent: 5138476 (1992-08-01), Shibutani
patent: 5144122 (1992-09-01), Danley et al.
patent: 5162658 (1992-11-01), Turner et al.
patent: 5164809 (1992-11-01), Street et al.
patent: 5198673 (1993-03-01), Rougeot et al.
patent: 5245191 (1993-09-01), Barber et al.
patent: 5281821 (1994-01-01), Antich et al.
patent: 5334839 (1994-08-01), Anderson et al.
Afanasiev et al., "MRS Silicon Avalanche Detectors with Negative Feedback for Time-of-Flight Systems," Proceedings of the 4th International Conference on Advanced Technology and Particle Physics, Como, Italy, Oct. 3-7, 1994, published in Nuclear Physics B (Proc. Suppl.) 44, pp. 402-405 (1995).
Antich et al., "Avalanche Photo Diode with Local Negative Feedback Sensitive to UV, Blue and Green Light," Nuclear Instruments & Methods in Physics Research, Section A 389, pp. 491-498(1997).
Bisello et al., "Metal-Resistive Layer-Silicon (MRS) Avalanche Detectors with Negative Feedback," Proceedings of Wire Chamber Conference, Feb. 1995, published in Nuclear Instruments and Methods in Physics Research A 360, pp.83-86 (1995).
Bisello et al., "Electrical Characteristics of Metal-Resistive Layer-Silicon (MRS) Avalanche Detectors, " Proceedings of the 4th International Conference on Advanced Technology and Particle Physics, Como, Italy, Oct. 3-7, 1994, published in Nuclear Physics B (Proc. Suppl.) 44, pp. 397-401 (1995).
Bisello et al., "Silicon Avalanche Detectors with Negative Feedback as Detectors for High Energy Physics," Proceedings of Wire Chamber Conference, Feb. 1995, published in Nuclear Instruments and Methods in Physics Research A 367, pp. 212-214 (1995).
Kulkarni et al., "New Approaches in Medical Imaging Using Plastic Scintillating Detector," Nuclear Instruments and Methods in Physics Research B79, pp. 921-925 (1993).
Locker et al., "A New Ionizing Radiation Detection Concept Which Employs Semiconductor Avalanche Amplification and the Tunnel Diode Element," Applied Physics Letters, vol. 9, No. 6, pp. 227-230 (1996).
Sadygov et al., "The Investigation of Possibility to Create the Multichannel Photodetector Based on the Avalanche MRS--Structure," Proceedings of the SPIE-The International Society for Optical Engineering, Zvenigorod, USSR, Apr. 2-6, 1991, published in SPIE vol. 1621, Optical Memory and Neural Networks, pp. 158-168(1991).
Shushakov et al., "New Solid State Photomultiplier," Report at Optoelectronic Integrated Circuit Materials, Physics and Devices Conference (part of Photonics West 95 Symposium, Feb. 11, 1995, SPIE vol. 2397, pp. 544-554 (1995).
U.S. Patent Application Ser. No. 08/771,207, entitled "Wide Wavelength Range High Efficiency Avalache Light Detector with Negative Feedback," by Peter P. Antich and Edward N. Tsyganov, filed Dec. 20,1996.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor radiation detectors with intrinsic avalanche multi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor radiation detectors with intrinsic avalanche multi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor radiation detectors with intrinsic avalanche multi will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1323966

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.