Semiconductor radiation detector with reduced surface effects

Details Semiconductor radiation detector with reduced surface effects Semiconductor radiation detector with reduced surface effects

1997-12-11

2000-03-07

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

25037008, 25037006, 2503384, 250372, H01L 2714

Patent

active

060343737

ABSTRACT:
A semiconductor detector including a substrate formed of a semiconductor material and defining two opposite facing surfaces and at least one side wall, electrodes formed on two opposite facing surfaces of the substrate, the electrodes on one of the two opposite facing surfaces including an array of mutually spaced pixellated anodes defining interstices therebetween, an electrical insulator formed on the substrate at locations in the interstices between the mutually spaced pixellated anodes, or on the side wall, or both, and an electrical conductor formed onto at least part of the electrical insulator. There is also disclosed a method for overcoming performance degradation in a semiconductor detector due to non-uniformities in an electric field.

REFERENCES:
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patent: 4837607 (1989-06-01), Kemmer et al.
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patent: 5326996 (1994-07-01), Mcnutt
patent: 5365069 (1994-11-01), Eisen et al.
P.N. Lake. UNIPOLAR CHARGE SENSING WITH COPLANAR ELECTRODES -APPLICATION TO SEMICONDUCTOR DETECTORS. Conference Proceedings. IEEE Symposium -Norfolk, Va., Oct. 1994. pp. 1-7.

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