Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2005-08-22
2010-10-19
Porta, Davis P (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
Reexamination Certificate
active
07816653
ABSTRACT:
A semiconductor radiation detector device comprises a conductive backside layer (102) of first conductivity type and a bulk layer (103). Opposite to the conductive backside layer (102) there are a modified internal gate layer (104) of second conductivity type, a barrier layer (105) of the first conductivity type and pixel dopings (110, 112, 506, 510, 512) of the second conductivity type. The pixel dopings are adapted to be coupled to a pixel voltage, which is defined as a potential difference to a potential of the conductive backside layer (102), and which creates potential minima inside the detector material for trapping the signal charges.
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Kim Kiho
Porta Davis P
Wood, Philips, Katz Clark & Mortimer
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