Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-12-13
2005-12-13
Mai, Anh Duy (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S449000, C257S458000, C257S614000
Reexamination Certificate
active
06975012
ABSTRACT:
Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTezformed on one surface of the compound semiconductor crystal. Preferably, the rate “z” of occupation of tellurium in the compound InxCdyTezis in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate “y” of occupation of cadmium in the compound InxCdyTezis in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.
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Kyan Atsushi
Moriyama Miki
Murakami Masaki
Ohno Ryoichi
Acrorad Co., Ltd.
Cohen & Pontani, Lieberman & Pavane
Duy Mai Anh
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