Semiconductor radiation detector having voltage application...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S449000, C257S458000, C257S614000

Reexamination Certificate

active

06975012

ABSTRACT:
Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTezformed on one surface of the compound semiconductor crystal. Preferably, the rate “z” of occupation of tellurium in the compound InxCdyTezis in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate “y” of occupation of cadmium in the compound InxCdyTezis in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.

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Matsumoto et al., “Performance of a new Schottky CdTe detector for hard X-ray spectroscopy”, Nuclear Science Symposium, 1997, IEEE, pp. 569 to 573, vol. 11.

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