Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2008-04-08
2008-04-08
Porta, David (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
Reexamination Certificate
active
07355185
ABSTRACT:
A semiconductor radiation detector10comprises a Si substrate11of an N-ype of low resistance, an arsenic coating layer12formed on the Si substrate, and a CdTe growth layer13of a P-type of high resistance laminated and formed thereon by the MOVPE method, which is divided into multiple plane elements of a hetero junction structure by means of division grooves15extending from the CdTe growth layer surface to the Si substrate. The Si substrate is heated in a hydrogen reducing atmosphere of a high temperature, and its surface is cleaned. On this Si substrate, GaAs powder or GaAs crystals are thermally decomposed, and coated by arsenic molecule to an extent at about one molecular layer, and an arsenic coating layer is thereby formed. On the Si substrate forming the arsenic coating layer, a CdTe growth layer is formed by the MOVPE method to a film thickness of about 0.2 to 0.5 mm in an atmosphere of about 450 to 500 deg. C.
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Niraula Madan
Yasuda Kazuhito
Gaworecki Mark R
Nagoya Industrial Science Research Institute
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Porta David
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