1984-08-14
1986-09-09
Davie, James W.
357 2, 357 61, 357 63, H01L 2714
Patent
active
046112243
ABSTRACT:
In the specific embodiments described in the specification, a semiconductor radiation detector has a single-crystal silicon substrate coated with an amorphous silicon film containing an impurity to widen the mobility band gap of the semiconductor to reduce the reverse bias leakage current. Phosphorus and carbon are disclosed as impurities for the amorphous silicon film.
REFERENCES:
H. Norda and P. A. Tove Vacuum, vol. No. 3, 201, (1977), "Behaviour of Amorphous Ge Contacts to Monocrystalline Silicon".
P. A. Tove, Physica Scripta, vol. 18,417, (1978), "Correlation between Barrier Heights and Electron and Hole Currents from Schottky Contacts to Silicon Radiation Detectors, and the Observation of Anomalously Low Hole Currents".
Sato Noritada
Seki Yasukazu
Yabe Masaya
Davie James W.
Epps Georgia Y.
Fuji Electric Company Ltd.
Fuji Electric Corporate Research & Development Co. Ltd.
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