Semiconductor radiation detector

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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Details

250370, H01L 2714, G01T 122

Patent

active

041019245

ABSTRACT:
A structure is described in which a large area depletion region is provided in a semiconductor substrate of one conductivity type for the conversion of photons into charge and in which a small area region of opposite conductivity type is provided in the substrate for read out of the collected charge.

REFERENCES:
patent: 3418473 (1968-12-01), Blue

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