Semiconductor radiation detector

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

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G01T 122

Patent

active

042108055

ABSTRACT:
A radiation detector includes a detection element having a single crystal silicon substrate with an impurity concentration of less than 1.times.10.sup.14 cm.sup.-3, a metal layer formed on one surface of the substrate to form a surface barrier therebetween and an electrode layer mounted on the opposite surface of the substrate. Between the metal layer and electrode layer there is not applied a bias.

REFERENCES:
patent: 4047037 (1977-09-01), Schlosser et al.
patent: 4058729 (1977-11-01), Sher
patent: 4122345 (1978-10-01), Rougeot

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