Semiconductor radiation detector

Details Semiconductor radiation detector Semiconductor radiation detector

1988-01-29

1989-11-07

Howell, Janice A.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

357 29, G01T 124, H01L 2714

Patent

active

048794660

ABSTRACT:
A structure of semiconductor radiation detector element having a p-n junction comprises a substrate layer including a radiation absorbing layer having a silicon equivalent thickness not smaller than 140 .mu.m and located adjacent to a depletion layer formed at the p-n junction. With the simplified structure, both the detection sensitivity and the energy compensating performance are enhanced significantly.

REFERENCES:
patent: 4163240 (1979-07-01), Swinehart et al.

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