Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1994-03-29
1995-10-10
Fields, Carolyn E.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
25037002, 257429, G01T 124
Patent
active
054573220
ABSTRACT:
The invention provides a high sensitivity semiconductor radiation detection apparatus having pn junctions formed in opposite surfaces of at least one semiconductor wafer. A common electrode for the pn junctions is formed in the substrate region of the semiconductor wafers, and a variable reverse bias voltage is supplied to an electrode formed in contact with at least one of the pn junctions, to vary the thickness of the depletion region generated at said pn junction, and hence the sensitivity of said junction to incident radiation of varying energy levels. By adjusting the relative thickness of the respective depletion regions, different types of radiation may be distinguished.
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patent: 3484663 (1969-12-01), Halus
patent: 3792197 (1974-02-01), Chai
patent: 4011016 (1977-03-01), Layne et al.
patent: 4309604 (1982-01-01), Yoshikawa et al.
patent: 4651001 (1987-03-01), Harada et al.
Avdeichikov, "Semiconductor Si (npn) Detector With Two Surface-Barrier Junction", Nuclear Instruments and Methods, 138, No. 2, Oct., 1976, p. 381.
Izumi Shigeru
Kitaguchi Hiroshi
Fields Carolyn E.
Hitachi , Ltd.
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