Semiconductor radiation detecting device

Details Semiconductor radiation detecting device Semiconductor radiation detecting device

1987-03-16

1988-12-27

James, Andrew J.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 30, 357 15, 357 59, 357 45, 357 60, 250211R, H01L 2714, H01L 2948, H01J 4014

Patent

active

047944382

ABSTRACT:
A semiconductor radiation detector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. A set of contacts spaced along the length of the body each make ohmic contact to several rods at one end of each rod, and an ohmic contact is made to the semiconductor material of the matrix. Incident radiation is directed at a surface of the body which lies parallel to the rods. Detectors connected to each of the contacts along the length of the body detect current flow generated in the vicinity of the rods associated with each contact member by radiation penetrating into the body to that depth.

REFERENCES:
patent: 3765956 (1973-10-01), Li
patent: 4030116 (1977-06-01), Blumenfeld
patent: 4544939 (1985-10-01), Kosonochy et al.
patent: 4695861 (1987-09-01), Paine et al.

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