Semiconductor quantum well laser having a low threshold current

Details Semiconductor quantum well laser having a low threshold current Semiconductor quantum well laser having a low threshold current

1995-11-08

1997-09-09

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

056663757

ABSTRACT:
The present invention gives rise to a 1.3 .mu.m tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 .mu.m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm.sup.2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.

REFERENCES:
Seki et al., "Pure Strain Effect on Differential Gain of Strained InGaAsP/InP Quantum-Well Lasers" IEEE Photonics Technology Letters, vol. 5, No. 5, pp. 500-503 May 1993.

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