Semiconductor quantum dot light emitting/detecting devices

Details Semiconductor quantum dot light emitting/detecting devices Semiconductor quantum dot light emitting/detecting devices

1993-03-25

1994-03-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 19, 257 21, 257 85, 257184, H01L 3112

Patent

active

052930505

ABSTRACT:
A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second doped silicon layer formed on the second intrinsic silicon epitaxial layer.

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