Semiconductor protection device having a bipolar transistor and

Details Semiconductor protection device having a bipolar transistor and Semiconductor protection device having a bipolar transistor and

1986-07-22

1987-09-29

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 41, 357 43, 307200B, 307304, H01L 2978, H01L 2706, H01L 2972

Patent

active

046971998

ABSTRACT:
A semiconductor device has a safety device which includes an improved lateral bipolar transistor structure. The improvement is obtained by incorporating an auxiliary field effect transistor which has the emitter as its source zone and the collector as its drain zone, and in which the threshold voltage of the auxiliary field effect transistor is lower than the avalanche breakdown voltage of the collector-base junction of the lateral transistor. As a result, the lateral transistor switches sooner, at a lower voltage, to the readily conductive on-state.

REFERENCES:
patent: 3395290 (1968-07-01), Farina et al.
patent: 3407339 (1968-10-01), Booher
patent: 3673427 (1972-06-01), McCoy et al.
patent: 3754171 (1973-08-01), Anzai et al.
patent: 4481521 (1984-11-01), Okumura

Affiliated with

Also associated with

Rating

Semiconductor protection device having a bipolar transistor and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor protection device having a bipolar transistor and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor protection device having a bipolar transistor and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1591707