Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1991-07-29
1993-12-28
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257163, 257169, 257170, H01L 2974
Patent
active
052742539
ABSTRACT:
The semiconductor protection device has a p.sup.+ -n.sup.- -p-n.sup.+ layer construction, and an n type impurity diffusion region is selectively formed in a surface portion of the pn junction. This n type impurity diffusion region is formed in a linear planar portion where substantially no electric field concentration is generated when a reverse voltage is applied to the pn junction formed between the n.sup.- type semiconductor region and the p type semiconductor region. Further, an electrode is provided in ohmic contact with both of the p type semiconductor region and the n.sup.+ type semiconductor region. This electrode is selectively made in contact with the p type semiconductor region at a position remote from the n type impurity diffusion region and adjacent to a curved planar portion of the pn junction where the electric field concentration tends to occur when a reverse voltage is applied to the pn junction formed between the n.sup.- type semiconductor region and the p type semiconductor region.
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patent: 5111268 (1992-05-01), Temple
Bowers Courtney A.
NEC Corporation
Wojciechowicz Edward
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