Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Reexamination Certificate
2006-05-16
2006-05-16
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
C257S567000, C257S568000, C257S200000
Reexamination Certificate
active
07045877
ABSTRACT:
The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1to Q5and a second group of a protection circuit having a plurality of bipolar transistors.
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K. Joshin et al., “Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1.95 GHz Wide-Band CDMA Cellular Phones”, IEICE Trans. Electron., vol. E82-C, No. 5, May 1999, pp. 725-729.
Kurokawa Atsushi
Kusano Chushiro
Ohbu Isao
Ohsone Yasuo
Ono Hideyuki
Miles & Stockbridge PC
Nelms David
Nguyen Thinh T
Renesas Technology Corp.
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