Semiconductor production method and semiconductor production...

Details Semiconductor production method and semiconductor production... Semiconductor production method and semiconductor production...

2008-07-25

2010-06-15

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

C438S014000, C257SE21001

Reexamination Certificate

active

07736912

ABSTRACT:
The objective of the present invention is to prevent the variation in an ashing rate according to a temporal change within an ashing chamber. Then, in order to maintain the ashing rate, the decrease in the number of oxygen atoms in ashing gas within a process chamber101is indirectly monitored, and ashing gas, which is equivalent to the decreased number of oxygen atoms, is supplied. As a means to indirectly monitor this decrease amount, the valve travel of an APC valve130is monitored, and the decreased ashing gas is estimated, and the ashing gas is supplied.

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patent: WO 03/090267 (2003-10-01), None

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