Semiconductor processing utilizing carbon containing thick film

Details Semiconductor processing utilizing carbon containing thick film Semiconductor processing utilizing carbon containing thick film

1987-10-02

1989-01-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437231, H01L 21441, H01L 21473

Patent

active

048015601

ABSTRACT:
Described is a process of utilizing carbon containing thick film spin-on glass with a directional etching process, such as RIE, or a downstream etching mechanism. As a layer of photoresist is etched from the surface of the spin-on glass, a skin layer of carbonless glass results. The skin layer protects the remaining glass from having the carbon removed allowing the use of spin-on glass on the order of 10,000 Angstroms thick.

REFERENCES:
patent: 4723978 (1988-02-01), Clodgo et al.
Butherus et al., J. Vac. Sci. Technol. B3(5), (Sep./Oct. 1985), pp. 1352-1356.

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