Semiconductor processing technique with differentially fluxed ra

Details Semiconductor processing technique with differentially fluxed ra Semiconductor processing technique with differentially fluxed ra

1985-04-10

1987-06-02

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148175, 148187, 148DIG93, 156635, 156643, 427 531, H01L 21265, B05D 512

Patent

active

046700633

ABSTRACT:
A semiconductor processing technique is disclosed for periodically selectively effecting lattice ordering and dopant distribution during a semiconductor layer formation process. Excimer pulsed ultraviolet laser radiation is provided at different energy fluxes to provide an electrically active layer as formed, without post-annealing, and curing lattice damage otherwise due to certain processing methods such as ion implantation. In a photolytic deposition technique, excimer laser radiation is periodically increased to transiently provide a pyrolytic thermal reaction in the layer as thus far deposited to provide a plurality of short intermittent periodic annealing steps to ensure crystallization as the layer continues to be deposited at lower radiation energy fluxes. Single crystalline material may be formed without post-annealing by periodically irradiating incremental thicknesses of the layer as formed.

REFERENCES:
patent: 4370176 (1983-01-01), Bruel
patent: 4394237 (1983-07-01), Donnelly et al.
patent: 4529617 (1985-07-01), Chenevas-Paule et al.
Deutsch in Mat. Res. Soc. Symp. #17, ed. Osgood et al., Elseviy, 1983, p. 225.
Young et al., Solid St. Technol. 26, (1983), p. 183.
Ehrlich et al., IEEE J. Quantum Electronics, QE--16, (1980), 1233.
Bauerle, D. in Laser--Photochemical Processing--Dences, ed. Osgood et al., North Holland, N.Y., 1982, p. 19.
Eden et al., Ibid, p. 185.

Affiliated with

Also associated with

Rating

Semiconductor processing technique with differentially fluxed ra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor processing technique with differentially fluxed ra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor processing technique with differentially fluxed ra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-610977