Semiconductor processing technique for oxygen doping of silicon

Details Semiconductor processing technique for oxygen doping of silicon Semiconductor processing technique for oxygen doping of silicon

1981-09-14

1984-12-25

Hearn, Brian E.

Metal treatment

Compositions

Heat treating

29576B, H01L 21265

Patent

active

044901828

ABSTRACT:
A process for isolating a semiconductor device formed in a p-type silicon substrate includes implanting a layer of oxygen ions below the device. The substrate is then heated to 430.degree.-470.degree. C. to activate the silicon/oxygen complexes thus formed and compensate or overcompensate the region thus forming an intrinsic or n-type isolating layer. The technique may be employed for the isolation of DMOS structures.

REFERENCES:
patent: 3622382 (1971-11-01), Brack
patent: 3830668 (1974-08-01), Dearnaley et al.
patent: 3976511 (1976-08-01), Johnson
patent: 4406051 (1983-09-01), Iizuka

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