Semiconductor processing system

Coating apparatus – Gas or vapor deposition

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Details

118725, 156345, C23C 1600

Patent

active

061206059

ABSTRACT:
A single wafer processing type of a semiconductor processing system is provided so as to achieve that residual particles inside a reactor thereof are efficiently removed and a gas injected into the reactor is uniformly flowed over a wafer in a wide range of the gas flow rate. The semiconductor processing system includes gas flow adjusting means (28, 29, 30) having a slit (30) communicated with an exhaust port (35) for pumping out a gas injected into a reactor (10) from the reactor (10). The slit (30) is provided annularly around a circumference of a wafer (34) and positioned below a position of the wafer (34), and a width of the slit (30) is narrowed about the exhaust port (35).

REFERENCES:
patent: 4693211 (1987-09-01), Ogami et al.
patent: 4870923 (1989-10-01), Sugimoto
patent: 5000113 (1991-03-01), Wang et al.
patent: 5186756 (1993-02-01), Benko et al.
patent: 5192370 (1993-03-01), Oda et al.
patent: 5441568 (1995-08-01), Cho et al.
patent: 5472508 (1995-12-01), Saxena
patent: 5525160 (1996-06-01), Tanaka et al.
patent: 5558717 (1996-09-01), Zhao
patent: 5772770 (1998-06-01), Suda et al.
patent: 5891350 (1999-04-01), Shan et al.
patent: 5935833 (1999-08-01), Lei et al.

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