Coating apparatus – Gas or vapor deposition
Patent
1998-02-05
2000-09-19
Lund, Jeffrie R
Coating apparatus
Gas or vapor deposition
118725, 156345, C23C 1600
Patent
active
061206059
ABSTRACT:
A single wafer processing type of a semiconductor processing system is provided so as to achieve that residual particles inside a reactor thereof are efficiently removed and a gas injected into the reactor is uniformly flowed over a wafer in a wide range of the gas flow rate. The semiconductor processing system includes gas flow adjusting means (28, 29, 30) having a slit (30) communicated with an exhaust port (35) for pumping out a gas injected into a reactor (10) from the reactor (10). The slit (30) is provided annularly around a circumference of a wafer (34) and positioned below a position of the wafer (34), and a width of the slit (30) is narrowed about the exhaust port (35).
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ASM Japan K.K.
Lund Jeffrie R
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