Semiconductor processing silica soot abrasive slurry method...

Details Semiconductor processing silica soot abrasive slurry method... Semiconductor processing silica soot abrasive slurry method...

2007-06-12

2007-06-12

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257SE21230, C257SE21304

Reexamination Certificate

active

10130963

ABSTRACT:
The invention utilizes colloidal silica soot (62) in a semiconductor process for chemical-mechanical planarizing a semiconductor integrated circuit workpiece (24) with a slurry (60). The particulate abrasive agent colloidal solid sphere fused silica soot (62) provides a beneficial CMP slurry/process for semiconductor device manufacturing compared to standard semiconductor CMP slurries with conventional colloidal sol-gel or fumed silica.

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P.C. Aitcin et al., “Physical And Chemical Characterization of Condensed Silica Fumes”, Ceramic Bulletin, vol. 63, No. 12, 1984, pp. 1487-1491.

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