Semiconductor processing parts having apertures with...

Coating processes – Coating by vapor – gas – or smoke – Carbon or carbide coating

Reexamination Certificate

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C427S237000, C427S248100, C427S249100, C118S715000

Reexamination Certificate

active

07807222

ABSTRACT:
Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

REFERENCES:
patent: 1694059 (1928-12-01), Denny
patent: 3011006 (1961-11-01), Nicholson
patent: 4194028 (1980-03-01), Sirtl et al.
patent: 4377347 (1983-03-01), Hanmyo et al.
patent: 4592307 (1986-06-01), Jolly
patent: 4692556 (1987-09-01), Bollen et al.
patent: 4706720 (1987-11-01), Pattison et al.
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 4978567 (1990-12-01), Miller
patent: 4984904 (1991-01-01), Nakano et al.
patent: 5006220 (1991-04-01), Hijikata et al.
patent: 5027746 (1991-07-01), Frijlink
patent: 5065698 (1991-11-01), Koike
patent: 5098198 (1992-03-01), Nulman
patent: 5104514 (1992-04-01), Quartarone
patent: 5246500 (1993-09-01), Samata et al.
patent: 5271967 (1993-12-01), Kramer et al.
patent: 5315092 (1994-05-01), Takahashi et al.
patent: 5336327 (1994-08-01), Lee
patent: 5360269 (1994-11-01), Ogawa et al.
patent: 5421893 (1995-06-01), Perlov
patent: 5456761 (1995-10-01), Auger et al.
patent: 5474618 (1995-12-01), Allaire
patent: 5493987 (1996-02-01), McDiarmid et al.
patent: 5514439 (1996-05-01), Sibley
patent: 5562774 (1996-10-01), Breidenbach et al.
patent: 5571333 (1996-11-01), Kanaya
patent: 5788799 (1998-08-01), Steger et al.
patent: 5902407 (1999-05-01), deBoer et al.
patent: 5904778 (1999-05-01), Lu et al.
patent: 5910221 (1999-06-01), Wu
patent: 6024799 (2000-02-01), Chen et al.
patent: 6056823 (2000-05-01), Sajoto et al.
patent: 6066209 (2000-05-01), Sajoto et al.
patent: 6120640 (2000-09-01), Shih et al.
patent: 6129808 (2000-10-01), Wicker et al.
patent: 6162543 (2000-12-01), Dubots et al.
patent: 6170429 (2001-01-01), Schoeppe et al.
patent: 6227140 (2001-05-01), Kennedy et al.
patent: 6325858 (2001-12-01), Wengert et al.
patent: 6342691 (2002-01-01), Johnsgard et al.
patent: 6408786 (2002-06-01), Kennedy et al.
patent: 6454860 (2002-09-01), Metzner et al.
patent: 6506254 (2003-01-01), Bosch et al.
patent: 6524428 (2003-02-01), Tamura et al.
patent: 6592707 (2003-07-01), Shih et al.
patent: 6635115 (2003-10-01), Fairbairn et al.
patent: 6890861 (2005-05-01), Bosch
patent: 6942753 (2005-09-01), Choi et al.
patent: 2003/0029563 (2003-02-01), Kaushai et al.
patent: 2003/0035905 (2003-02-01), Lieberman et al.
patent: 2003/0198749 (2003-10-01), Kumar et al.
patent: 2004/0060658 (2004-04-01), Nishimoto et al.
patent: 2005/0017310 (2005-01-01), Granneman et al.
patent: 2005/0178748 (2005-08-01), Buchberger et al.
patent: 0 154 695 (1982-04-01), None
patent: 0 229 488 (1988-12-01), None
patent: 0 723 141 (1995-12-01), None
patent: 5-64627 (1993-05-01), None
patent: 2005 294559 (2005-10-01), None
patent: WO 95/31582 (1995-11-01), None
patent: WO 97/06288 (1997-02-01), None
patent: WO 99/23276 (1999-05-01), None
patent: WO 01/11223 (2002-11-01), None
Benson, Mass Flow Rate, NASA, (Aug. 7, 2000).
Jensen, The Hirsch and Büchner Filtration Funnels, Journal of Chemistry Education, (Sep. 1, 2006).
Schwartz et al., Handbook of Semiconductor Interconnection Technology, CRC Press, (Feb. 22, 2006).
Linke, J. and Vietzke, E., “Behavior of Boron Doped Graphites, Plasma Sprayed Boron Carbides and a-C/B:H as Plasma Facing Material,”J. Fusion Tech., vol. 20, pp. 228-231 (Sep. 1991).
Ponnekanti et al., “Failure mechanisms of anodized aluminum parts used in chemical vapor deposition chambers,”J. Vac. Sci. Technol., A14(3) (May 1, 1996).
Shackelford, J. “Introduction to Materials Science for Engineers,” 3d ed., Macmillan Publishing Co., pp. 398 (1992).
European Patent Office Search Report of Jan. 29, 2009; Application No. 008014738.2-2222; 5 pages.

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