Fishing – trapping – and vermin destroying
Patent
1995-07-25
1997-09-23
Dang, Trung
Fishing, trapping, and vermin destroying
437 70, 437 72, 437 73, H01L 2176
Patent
active
056704127
ABSTRACT:
A semiconductor processing method of forming field oxide regions includes, a) providing a sacrificial pad oxide layer over a semiconductor substrate; b) providing a Ge.sub.x Si.sub.y layer over the pad oxide layer, where x is greater than 0.2, y is from 0 to 0.8, and x+y=1.0; c) providing a patterned nitride oxidation masking layer over the Ge.sub.x Si.sub.y layer to define at least one pair of adjacent nitride masking blocks overlying desired active area regions of the substrate; d) etching exposed portions of the Ge.sub.x Si.sub.y layer and thereby defining exposed sidewall edges of the Ge.sub.x Si.sub.y layer; e) providing an oxidation restriction layer over the respective Ge.sub.x Si.sub.y sidewalls, the oxidation restriction layer restricting rate of oxidation of the Ge.sub.x Si.sub.y layer from what would otherwise occur if the oxidation restriction layer were not present; f) oxidizing portions of the substrate unmasked by the masking layer to form at least one pair of adjacent SiO.sub.2 substrate field oxide regions; g) stripping the patterned masking layer from the substrate; h) after stripping the masking layer, stripping the Ge.sub.x Si.sub.y layer or any oxidation product therefrom from the substrate selectively relative to SiO.sub.2 ; and i) after stripping the Ge.sub.x Si.sub.y layer or any oxidation product, stripping the pad oxide and any other oxide from the substrate between the pair of adjacent field oxide regions to outwardly expose substrate active area between the pair of field oxide regions. The invention also contemplates products produced by such method.
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Dang Trung
Micro)n Technology, Inc.
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