Semiconductor processing methods, methods of forming capacitors,

Details Semiconductor processing methods, methods of forming capacitors, Semiconductor processing methods, methods of forming capacitors,

1998-02-03

2000-11-21

Wilczewski, Mary

Semiconductor device manufacturing: process

Making passive device

438775, 438777, 438791, 438792, 438393, H01L 2131

Patent

active

06150226&

ABSTRACT:
In one aspect, the invention includes a method of densifying a silicon nitride layer comprising: after forming the silicon nitride layer, exposing the silicon nitride layer to atomic nitrogen, the exposing not increasing a thickness of the silicon nitride layer by more than about 10 Angstroms. In another aspect, the invention includes a method of densifying a silicon nitride layer comprising: after forming the silicon nitride layer, exposing the silicon nitride layer to atomic nitrogen in the substantial absence of a silicon-containing gas. In another aspect, the invention includes a method of forming a capacitor comprising: a) providing a silicon-containing first capacitor electrode having a surface; b) forming a dielectric layer over the surface of the first capacitor electrode, the forming the dielectric layer comprising: i) forming a silicon nitride layer at the surface of the silicon-comprising substrate, the silicon nitride layer being formed to a thickness and having one or more pinholes extending into it; and ii) after forming the silicon nitride layer, exposing the silicon nitride layer to atomic nitrogen to close the one or more pinholes; and c) forming a second capacitor electrode over the dielectric layer; the first capacitor electrode, second capacitor electrode and dielectric layer together comprising a capacitor.

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