Semiconductor processing methods, and methods of forming capacit

Details Semiconductor processing methods, and methods of forming capacit Semiconductor processing methods, and methods of forming capacit

1999-05-26

2000-10-31

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

216 87, 216 99, 438745, 438753, H01L 2100

Patent

active

061402451

ABSTRACT:
In one aspect, the invention encompasses a semiconductor processing method. Two silicon-comprising masses are provided. A first of the two masses comprises a higher dopant concentration than a second of the two masses. The two masses are exposed to common conditions which etch the second mass faster than the first mass. In another aspect, the invention encompasses another embodiment semiconductor processing method. A substrate is provided. The substrate has at least one doped polysilicon mass formed thereover, and has regions not proximate the at least one doped polysilicon mass. Roughened polysilicon is formed along the at least one doped polysilicon mass and over said regions of the substrate. A dopant concentration in the roughened polysilicon is increased along the at least one doped polysilicon mass relative to any dopant concentration in the roughened polysilicon over said regions of the substrate. After the dopant concentration is increased, the roughened polysilicon along the at least one doped polysilicon mass and the roughened polysilicon over said regions of the substrate are exposed to common conditions. The common conditions remove the roughened polysilicon from over said regions of the substrate and leave the roughened polysilicon along the doped polysilicon mass.

REFERENCES:
patent: 5358908 (1994-10-01), Reinberg et al.
patent: 5639689 (1997-06-01), Woo
patent: 5817580 (1998-10-01), Violette
patent: 5869399 (1999-02-01), Chen
patent: 5946595 (1999-08-01), Doan et al.

Affiliated with

Also associated with

Rating

Semiconductor processing methods, and methods of forming capacit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor processing methods, and methods of forming capacit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor processing methods, and methods of forming capacit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2051295