Semiconductor processing methods, and methods of forming...

Details Semiconductor processing methods, and methods of forming... Semiconductor processing methods, and methods of forming...

2000-09-25

2001-05-01

Powell, William (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C216S087000, C216S099000, C438S745000, C438S753000

Reexamination Certificate

active

06225232

ABSTRACT:

TECHNICAL FIELD
The invention pertains to semiconductor processing methods, including, for example, methods of forming capacitor constructions. In particular aspects, the invention pertains to methods of selectively etching a less-doped silicon-comprising mass faster than a higher-doped silicon-comprising mass, and to semiconductor fabrication processes incorporating such methods.
BACKGROUND OF THE INVENTION
Semiconductor fabrication processes frequently involve patterning of electrical devices and interconnections from semiconductive materials. A method of accomplishing such patterning is to treat a semiconductive material such that one portion is selectively etchable relative to another portion. For instance, silicon-comprising semiconductive materials can be treated with a dopant to render certain portions selectively etchable relative to other portions. Specifically, if portions of a silicon-comprising material are doped with phosphorus, such portions will be selectively etchable relative to other portions that are not doped with phosphorus under etching conditions utilizing a base, such as, for example, KOH, NaOH, NH
4
OH, and tetramethyl ammonium hydroxide (TMAH).
Although the above-discussed methodology enables patterning of a silicon-comprising material, the processing can be difficult to incorporate into applications in which it is a doped silicon-comprising material that is ultimately desired. Specifically, since the above-discussed methodology selectively removes doped silicon relative to undoped silicon, patterning incorporating such methodology ultimately forms an undoped silicon-comprising material. In many semiconductor processing applications, it is ultimately desired to form a doped silicon-comprising material. For instance, in applications in which it is desired to have the silicon-comprising material be conductive, it is ultimately desired that the silicon-comprising material be doped. In such applications, the above-discussed methodology for selectively removing a doped silicon-comprising material relative to an undoped silicon-comprising material is exactly backwards of what would be desired.
SUMMARY OF THE INVENTION
In one aspect, the invention encompasses a semiconductor processing method. Two silicon-comprising masses are provided. A first of the two masses comprises a higher dopant concentration than a second of the two masses. The two masses are exposed to common conditions which etch the second mass faster than the first mass.
In another aspect, the invention encompasses another embodiment semiconductor processing method. A substrate is provided. The substrate has at least one doped polysilicon mass formed thereover, and has regions spaced from the at least one doped polysilicon mass. Roughened polysilicon is formed along the at least one doped polysilicon mass and over said regions of the substrate. A dopant concentration in the roughened polysilicon is increased along the at least one doped polysilicon mass relative to any dopant concentration in the roughened polysilicon over said regions of the substrate. After the dopant concentration is increased, the roughened polysilicon along the at least one doped polysilicon mass and the roughened polysilicon over said regions of the substrate are exposed to common conditions. The common conditions remove the roughened polysilicon from over said regions of the substrate while leaving the roughened polysilicon along the doped polysilicon mass.


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