Semiconductor processing methods

Details Semiconductor processing methods Semiconductor processing methods

2011-03-29

2011-03-29

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Reexamination Certificate

active

07915168

ABSTRACT:
Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized to for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

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