Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-06-27
2006-06-27
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S951000
Reexamination Certificate
active
07067426
ABSTRACT:
The invention includes methods of forming patterns in low-k dielectric materials by contact lithography. In a particular application, a mold having a first pattern is pressed into a low-k dielectric material to form a second pattern within the material. The second pattern is substantially complementary to the first pattern. The mold is then removed from the low-k dielectric material. The invention also includes a method of forming a mold; and includes a mold configured to pattern a mass over a semiconductor substrate during contact lithography of the mass.
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Hoang Quoc
Micro)n Technology, Inc.
Nelms David
Wells St. John P.S.
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