Semiconductor processing method of making a hemispherical grain

Details Semiconductor processing method of making a hemispherical grain Semiconductor processing method of making a hemispherical grain

1996-01-18

1997-11-25

Tsai, Jey

Fishing, trapping, and vermin destroying

437919, 437193, 437247, 437 52, H01L 2170, H01L 2700

Patent

active

056912285

ABSTRACT:
A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate includes, a) providing a substantially amorphous layer of silicon over a substrate at a selected temperature; b) raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature, the temperature raising being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and c) depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature. Transformation to hemispherical grain might occur during the temperature rise to the higher dielectric layer deposition temperature, after the higher dielectric layer deposition temperature has been achieved but before dielectric layer deposition, or after the higher dielectric layer deposition temperature has been achieved and during dielectric layer deposition. The temperature raising step can include initially raising the silicon layer temperature to an annealing temperature below the higher dielectric layer deposition temperature, and maintaining the silicon layer at the annealing temperature for a time period effective to increase its degree of surface roughness. Subsequently the silicon layer temperature is raised to the higher dielectric layer deposition temperature, with such further increasing the degree of surface roughness of the resultant silicon layer.

REFERENCES:
patent: 5227322 (1993-07-01), Ko et al.
patent: 5256587 (1993-10-01), Jun et al.
patent: 5407534 (1995-04-01), Thakur

Affiliated with

Also associated with

Rating

Semiconductor processing method of making a hemispherical grain does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor processing method of making a hemispherical grain , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor processing method of making a hemispherical grain will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2106372