Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Patent
1996-11-14
1999-10-12
Chaudhari, Chandra
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
438439, 438452, 438253, H01L 2176
Patent
active
059666218
ABSTRACT:
A semiconductor processing method of forming field isolation oxide relative to a silicon substrate includes, i) rapid thermal nitridizing an exposed silicon substrate surface to form a base silicon nitride layer on the silicon substrate; ii) providing a silicon nitride masking layer over the nitride base layer, the base and masking silicon nitride layers comprising a composite of said layers of a combined thickness effective to restrict appreciable oxidation of silicon substrate thereunder when the substrate is exposed to LOCOS conditions; and iii) exposing the substrate to oxidizing conditions effective to form field isolation oxide on substrate areas not masked by the base and masking silicon nitride layers composite. Further, a semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate includes, a) masking a first portion of a semiconductor substrate with a composite comprising a first nitride layer, a polysilicon layer over the nitride layer, and a second nitride layer over the polysilicon layer; and leaving a second portion of the semiconductor substrate unmasked by said composite; and b) exposing the semiconductor substrate to oxidizing conditions effective to form field isolation oxide in the second substrate portion.
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Blum David S.
Chaudhari Chandra
Micro)n Technology, Inc.
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