Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1998-06-10
2000-07-04
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257647, 257396, 257397, H01L 2358, H01L 2976, H01L 2994
Patent
active
06084289&
ABSTRACT:
A semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass includes, a) forming a field isolation mass within a semiconductor substrate by a trench and refill technique, and a substrate masking layer over the substrate adjacent the field isolation mass, the field isolation mass being capped with an etch stop cap, the field isolation mass having a sidewall covered by the masking layer; b) removing the substrate masking layer away from the isolation mass to expose at least a portion of the isolation mass sidewall; c) forming an etch stop cover over the exposed isolation mass sidewall; d) forming an insulating layer over the isolation mass and substrate area adjacent the isolation mass; and e) etching a contact opening through the insulating layer to adjacent the isolation mass selectively relative to the isolation mass etch stop cap and cover. A semiconductor structure is also described.
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Dennison Charles H.
Doan Trung Tri
Clark Jhihan B.
Hardy David
Micro)n Technology, Inc.
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