Semiconductor processing method of forming a contact opening to

Details Semiconductor processing method of forming a contact opening to Semiconductor processing method of forming a contact opening to

1997-04-03

1999-02-02

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438222, 438634, 148DIG50, H01L 2176, H01L 2146

Patent

active

058664653

ABSTRACT:
A semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass includes, a) forming a field isolation mass within a semiconductor substrate by a trench and refill technique, and a substrate masking layer over the substrate adjacent the field isolation mass, the field isolation mass being capped with an etch stop cap, the field isolation mass having a sidewall covered by the masking layer; b) removing the substrate masking layer away from the isolation mass to expose at least a portion of the isolation mass sidewall; c) forming an etch stop cover over the exposed isolation mass sidewall; d) forming an insulating layer over the isolation mass and substrate area adjacent the isolation mass; and e) etching a contact opening through the insulating layer to adjacent the isolation mass selectively relative to the isolation mass etch stop cap and cover. A semiconductor structure is also described.

REFERENCES:
patent: 4980306 (1990-12-01), Shimbo
patent: 5219793 (1993-06-01), Cooper et al.
patent: 5292683 (1994-03-01), Dennison et al.
patent: 5362669 (1994-11-01), Boyd et al.
patent: 5506168 (1996-04-01), Morita et al.

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