Fishing – trapping – and vermin destroying
Patent
1992-04-16
1993-07-20
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 72, 437 63, 437978, 148DIG50, H01L 2176
Patent
active
052293165
ABSTRACT:
A semiconductor processing method for forming a substrate isolation trench includes the following steps: a) providing a layer of selected material atop a substrate to a selected thickness; b) providing a sacrificial layer of a selected etch stop material to a selected thickness atop the layer of selected material; c) patterning and etching through the sacrificial layer and selected material layer, and into the substrate to define an isolation trench; d) depositing a trench filling material to a selected thickness atop the substrate and within and filling the isolation trench; e) planarize etching the trench filling material using the sacrificial layer as an effective etch stop for such planarize etching; f) etching the sacrificial layer from the substrate and thereby leaving a pillar of trench filling material projecting upwardly relative to an upper substrate surface; and g) selectively etching the projecting pillar relative to the upper substrate surface.
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Gonzalez Fernando
Lee Roger R.
Dang Trung
Hearn Brian E.
Micro)n Technology, Inc.
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