Semiconductor processing method employing an angled sidewall

Details Semiconductor processing method employing an angled sidewall Semiconductor processing method employing an angled sidewall

1995-08-18

1997-08-19

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437919, 437228, 148DIG14, 148DIG161, 148DIG168, H01L 218242

Patent

active

056588186

ABSTRACT:
A method of forming a capacitor includes, a) providing a substrate; b) etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical; c) providing a conformal layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and d) ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity. Preferred methods of providing the depression where the substrate comprises SiO.sub.2 include a dry, plasma enhanced, anisotropic spacer etch utilizing reactant gases of CF.sub.4 and CHF.sub.3 provided to the substrate at a volumetric ratio of 1:1, and facet sputter etching.

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