Radiant energy – Irradiation of objects or material – Ion or electron beam irradiation
Reexamination Certificate
2008-06-24
2008-06-24
Vanore, David A. (Department: 2881)
Radiant energy
Irradiation of objects or material
Ion or electron beam irradiation
C250S306000, C250S307000, C250S309000, C250S310000, C250S491100, C250S492100, C250S492200, C250S492210
Reexamination Certificate
active
07391039
ABSTRACT:
A secondary electron image generated by an electron beam is detected by a secondary electron/secondary ion detector while a silicon substrate is etched by a focused ion beam from a back surface of a semiconductor chip. A time point where the electron beam transmits through the silicon substrate, a contrast of a secondary electron image of a separation layer, a polysilicon layer and the like is detected by a picture image processing system is assumed to be a processing end point. At this time, by changing a setting for an acceleration voltage of the electron beam, an arbitrary remaining silicon thickness can be obtained.
REFERENCES:
patent: 4576884 (1986-03-01), Reisman
patent: 4841143 (1989-06-01), Tamura et al.
patent: 4933565 (1990-06-01), Yamaguchi et al.
patent: 5012109 (1991-04-01), Shichi et al.
patent: 5113072 (1992-05-01), Yamaguchi et al.
patent: 5229607 (1993-07-01), Matsui et al.
patent: 5525806 (1996-06-01), Iwasaki et al.
patent: 5578823 (1996-11-01), Taniguchi
patent: 5594245 (1997-01-01), Todokoro et al.
patent: 5656811 (1997-08-01), Itoh et al.
patent: 5969357 (1999-10-01), Todokoro et al.
patent: 6114695 (2000-09-01), Todokoro et al.
patent: 6303932 (2001-10-01), Hamamura et al.
patent: 6548810 (2003-04-01), Zaluzec
patent: 7138629 (2006-11-01), Noji et al.
patent: 2002/0197750 (2002-12-01), Tanaka et al.
patent: 2004/0262518 (2004-12-01), Lu et al.
patent: 2005/0276932 (2005-12-01), Takaoka et al.
patent: 2006/0043292 (2006-03-01), Matsui
patent: 2006/0060781 (2006-03-01), Watanabe et al.
patent: 2006/0097166 (2006-05-01), Ishitani et al.
patent: 2006/0255270 (2006-11-01), Kitamura et al.
patent: 5-290786 (1993-11-01), None
patent: 2001-050919 (2001-02-01), None
patent: 2002-298774 (2002-10-01), None
Antoniou, N., et al. “End point of silicon milling using an optical beam induced current signal for controlled access to integrated circuits for backside circuit editing” J. Vac. Sci. Technol. Nov./Dec. 2002, 20(6), pp. 2695-2699.
Japanese Office Action, with English translation, issued in Japanese Patent Application No. JP 2005-139725, mailed Oct. 2, 2007.
Antoniou, N., et al. “End point of silicon milling using an optical beam induced current signal for controlled access to integrated circuits for backside circuit editing” J. Vac. Sci. Technol. Nov./Dec. 2002, 20(6), pp. 2695-2699.
Kitamura Yuichi
Sugiura Naoto
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Souw Bernard
Vanore David A.
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