Semiconductor processing method and system

Details Semiconductor processing method and system Semiconductor processing method and system

2008-06-24

2008-06-24

Vanore, David A. (Department: 2881)

Radiant energy

Irradiation of objects or material

Ion or electron beam irradiation

C250S306000, C250S307000, C250S309000, C250S310000, C250S491100, C250S492100, C250S492200, C250S492210

Reexamination Certificate

active

07391039

ABSTRACT:
A secondary electron image generated by an electron beam is detected by a secondary electron/secondary ion detector while a silicon substrate is etched by a focused ion beam from a back surface of a semiconductor chip. A time point where the electron beam transmits through the silicon substrate, a contrast of a secondary electron image of a separation layer, a polysilicon layer and the like is detected by a picture image processing system is assumed to be a processing end point. At this time, by changing a setting for an acceleration voltage of the electron beam, an arbitrary remaining silicon thickness can be obtained.

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Antoniou, N., et al. “End point of silicon milling using an optical beam induced current signal for controlled access to integrated circuits for backside circuit editing” J. Vac. Sci. Technol. Nov./Dec. 2002, 20(6), pp. 2695-2699.
Japanese Office Action, with English translation, issued in Japanese Patent Application No. JP 2005-139725, mailed Oct. 2, 2007.
Antoniou, N., et al. “End point of silicon milling using an optical beam induced current signal for controlled access to integrated circuits for backside circuit editing” J. Vac. Sci. Technol. Nov./Dec. 2002, 20(6), pp. 2695-2699.

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