Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-02-26
1999-10-12
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438398, 438254, H01L 2170, H01L 218242
Patent
active
059666110
ABSTRACT:
In one aspect, the invention includes: a) forming a first opening into a substrate surface; b) forming a polysilicon layer over the substrate surface and within the first opening to a thickness which less than completely fills the first opening to leave a second opening within the first opening; c) forming a coating layer over the polysilicon layer and within the second opening; d) etching the coating layer and the polysilicon layer to remove the coating layer and the polysilicon layer from over the substrate surface and leave the coating layer and the polysilicon layer within the opening; and e) after the etching, removing the coating layer from within the opening. In another aspect, the invention includes: a) forming a first opening into a substrate surface; b) forming a polysilicon layer over the substrate surface and within the first opening to a thickness which less than completely fills the first opening to leave a second opening within the first opening, the polysilicon having a surface with a first degree of roughness; c) forming a coating layer over the polysilicon layer and within the second opening, the coating layer having a surface with a second degree of roughness which is less than the first degree of roughness; d) etching the coating layer and the polysilicon layer to remove the coating layer and the polysilicon layer from over the substrate surface and leave the coating layer and the polysilicon layer within the opening; and e) after the etching, removing the coating layer from within the opening.
REFERENCES:
patent: 5468979 (1995-11-01), Tani et al.
patent: 5811283 (1998-09-01), Sun
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, pp. 418-421 and 426, 1986.
Howard Bradley J.
Jost Mark E.
Chaudhuri Olik
Mao Danie H.
Micro)n Technology, Inc.
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