Semiconductor processing facility for providing enhanced oxidati

Details Semiconductor processing facility for providing enhanced oxidati Semiconductor processing facility for providing enhanced oxidati

1985-01-04

1986-07-08

Page, Thurman K.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

4272551, 4272553, 4272554, 427314, 427315, B05D 512, C23C 1600

Patent

active

045992479

ABSTRACT:
The disclosure relates to a method of growing thermal oxide on silicon wherein the oxide is grown at an increased rate, at reduced temperature or a combination thereof. This is accomplished by operating in an hermetic quartz tube capable of withstanding high pressure with steam or oxygen at super atmospheric pressure.

REFERENCES:
patent: 4232057 (1980-11-01), Ray et al.
patent: 4268538 (1981-05-01), Toole et al.

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