Semiconductor processing by a combination of photolytic, pyrolyt

Details Semiconductor processing by a combination of photolytic, pyrolyt Semiconductor processing by a combination of photolytic, pyrolyt

1987-11-30

1989-06-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG48, 148DIG58, 148DIG71, 148DIG73, 156612, 427 531, 437108, 437112, 437131, 437173, 437931, 437949, H01L 21306, H01L 2126, H01L 21265

Patent

active

048430307

ABSTRACT:
A semiconductor processing method is provided for growing a semiconductor film from a semiconductorbearing gas on a substrate at a substrate temperature below the pyrolytic threshold of the gas. The gas is photodissociated to a collisionally stable species which migrates and travels in the gas phase the entire distance to the substrate, surving hundreds of collisions, and is pyrolyzed at the surface of the substrate and forms several monolayers of semiconductor material which is substantially more catalytically active than the substrate and which subsequently catalyzes decomposition of the gas.

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The invention was made with government support under contract F49620-85-C-0141 awarded by the Air Force Office of Sponsored Projects, and contract NSF DMR 83-16981 awarded by the National Science Foundation. The government has certain rights in the invention.

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