Semiconductor processing apparatus and cleaning method thereof

Details Semiconductor processing apparatus and cleaning method thereof Semiconductor processing apparatus and cleaning method thereof

1995-08-21

1997-03-18

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723MR, 118723E, C23C 1600

Patent

active

056118635

ABSTRACT:
An ECR plasma CVD apparatus includes a plasma generation chamber to which a microwave and a plasma source gas are introduced. An excitation solenoid is arranged around the plasma generation chamber to form an electron cyclotron resonance magnetic field with the microwave in the plasma generation chamber. A plasma reaction chamber to which a reactive gas is introduced is provided in communication with the plasma generation chamber. A substrate holder for holding a silicon wafer is set in the plasma reaction chamber. A leakage-type butterfly valve whose opening degree can be freely controlled is arranged in communication with the plasma reaction chamber. A turbo molecular pump is formed in the outlet of the butterfly valve. A subpump is arranged in the outlet of the turbo molecular pump.

REFERENCES:
patent: 4816113 (1989-03-01), Yamazaki
patent: 4971667 (1990-11-01), Yamazaki et al.
patent: 5368685 (1994-11-01), Kumihashi et al.
patent: 5512102 (1996-04-01), Yamazaki

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