Semiconductor processing apparatus

Details Semiconductor processing apparatus Semiconductor processing apparatus

1994-06-24

1995-10-31

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118724, 118725, 118728, 118729, C23C 1600

Patent

active

054626030

ABSTRACT:
A CVD apparatus for a semiconductor wafer comprises a process chamber made of aluminum. A cylindrical quartz made case having a lower end opening is provided in the process chamber to mount the wafer. A flange of the lower end of the case is airtightly connected to a bottom wall of the process chamber to surround an opening formed in the bottom wall of the process chamber. The inner space of the case is airtightly isolated from a process space. The opening of the bottom wall is closed by a cover from the outside of the process chamber. A resistance heating body is provided in the case to be opposite to a top plate. Feed lines, and a thermocouple are introduced into the case from an atmospheric side through the cover. An inactive gas supply pipe and an exhausting pipe are connected to the cover. The inside of the case is in an inactive gas atmosphere, and oxidation of the resistance heating body is prevented.

REFERENCES:
patent: 5177878 (1993-01-01), Visser
patent: 5252807 (1993-10-01), Chizinsky

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