Semiconductor process using selective deposition

Details Semiconductor process using selective deposition Semiconductor process using selective deposition

1991-02-04

1991-12-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437193, 437 34, 148DIG105, H01L 21265

Patent

active

050700294

ABSTRACT:
A process for fabricating semiconductor devices is disclosed which utilizes a selective deposition process to reduce the total number of process steps and especially the total number of photolithography steps required. In accordance with one embodiment of the invention a semiconductor substrate is provided having an insulating layer, a nucleating layer, and a second insulating layer overlaying the substrate. A photoresist mask is used as an implant mask and as an etch mask to expose a portion of nucleating layer. A second implant mask is formed by the selective deposition of tungsten or other material on the exposed nucleating layer. The selectively deposited material is then used to mask for a second ion implantation.

REFERENCES:
patent: 3620833 (1971-11-01), Gliem et al.
patent: 4528744 (1985-07-01), Shibata
patent: 4822749 (1989-04-01), Flanner et al.
patent: 4874713 (1989-10-01), Gioia
patent: 4948745 (1990-08-01), Pfiester et al.

Affiliated with

Also associated with

Rating

Semiconductor process using selective deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor process using selective deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor process using selective deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1696770